Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors
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چکیده
منابع مشابه
Analysis of the Electrical Breakdown in Hydrogenated Amorphous Silicon Thin-Film Transistors
Electrical breakdown induced by systematic electrostatic discharge (ESD) stress of thin-film transistors used as switches in active matrix addresses liquid crystal displays has been studied using electrical measurements, electrical simulations, electrothermal simulations, and postbreakdown observations. Breakdown due to very short pulses (up to 1 s) shows a clear dependence on the channel lengt...
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In this paper, we study the electrical properties and current-temperature stress (CTS) induced electrical instability of half Corbino and fork-shaped hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) fabricated on the same substrate. The influence on overall electrical properties of the threshold voltage shift of half Corbino a-Si:H TFT is discussed in comparison to fork-shap...
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I hereby declare that I am the sole author of this thesis. This is a true copy of the thesis, including any required final revisions, as accepted by my examiners. I understand that my thesis may be made electronically available to the public. Abstract This thesis presents a study of the bias-induced threshold voltage metastability phenomenon of the hydrogenated amorphous silicon (a-Si:H) thin f...
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Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band ...
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Figure 1. (a) Trap occupancy of a trapping level under non-equilibrium conditions (b) probability of occupation (c) conceptual diagram of DOS, probability of occupation, and ionized densities in the a-Si TFTs. Figure 2. Examples of ATLAS simulation results with DEFECT and SAVE TRAP.FILE statements. Introduction Amorphous silicon Thin-Film Transistors (a-Si TFTs) are widely used as the switching...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2002
ISSN: 0018-9383
DOI: 10.1109/ted.2002.1003722